PART |
Description |
Maker |
MB814100D-60 MB814100D-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM) CMOS 4 M ?1 BIT Fast Page Mode DRAM(CMOS 4 M ?1浣??椤甸?瀛??妯″??ㄦ?RAM)
|
Fujitsu Limited
|
KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
AS4LC2M8S0-8TC AS4LC1M16S0-8TC AS4LC2M8S0-7TC AS4L |
3.3V 2M ??8/1M ??16 CMOS synchronous DRAM 3.3V 2M 8/1M 16 CMOS synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 3.3V 2M × 8/1M × 16 CMOS synchronous DRAM
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation
|
MB8504D064AA-70 MB8504D064AA-60 |
CMOS 4M×64 BIT
Hyper Page Mode DRAM Module(CMOS 4M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MB814400D-60 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
|
Fujitsu Limited
|
MB81V16160A-60 MB81V16160A-60L |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
AS4C4M4F1Q AS4C4M4FOQ |
5V 4M×4 CMOS QuadCAS DRAM (Fast Page Mode)(5V 4M×4 CMOS QuadCAS 动态RAM(快速页面模式))
|
Alliance Semiconductor Corporation
|
AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode) 256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp... Electronic Theatre Controls, Inc.
|
MCM51L4400 |
1M x 4 CMOS DRAM
|
Motorola
|